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產(chǎn)品中心

IGBT（Discrete） | IGBT（Module） | MOSFET | Diode | SiC

JSAB 600/650V IGBT | JSAB 1200V IGBT | JSAB 25/30V SGT-MOS | JSAB 40/60V SGT-MOS | JSAB P-MOS

650v/1200V/1350V/Module

SiC-1 | SiC-2 | SiC-3 | SiC-4

GreenMOS | SGTMOS | IGBT

650V Silicon Carbide Diode | 1200V Silicon Carbide Diode

SuperFAP-E3 | Discrete IGBT | LLD | High speed switching

SiC MOSFET | SiC Module | SiC SBD 1200V | SiC SBD 650V | GaN

MOSFET

Product Name	Blocking Voltage	RDS(ON)@25℃	ID@25℃	Qgd	Coss	Max Junction Temperature	Package
P3M173K0T3	1700V	3Ω	4A	1.55nC	12pF	175℃	TO-220-3
P3M173K0K3	1700V	3Ω	4A	1.55nC	12pF	175℃	TO-247-3
P3M171K0T3	1700V	1Ω	6A	10.1nC	47.4pF	175℃	TO-220-3
P3M171K0K3	1700V	1Ω	6A	2.5nC	8.9pF	175℃	TO-247-3
P3M12080K4	1200V	80mΩ	47A	13.5nC	78pF	175℃	TO-247-4
P3M12080K3	1200V	80mΩ	47A	13.5nC	78pF	175℃	TO-247-3
P3M12025K4	1200V	25mΩ	112A	43.5nC	228pF	175℃	TO-247-4
P3M12017K4	1200V	17mΩ	151A	47.3nC	283pF	175℃	TO-247-4
P3M06300D5	650V	300mΩ	9A	2.75nC	39.4pF	175℃	DFN5*6
P3M06060G7	650V	60mΩ	44A	15.3nC	162pF	175℃	TO-263-7
P3M06060K4	650V	60mΩ	48A	15.3nC	162pF	175℃	TO-247-4
P3M06060K3	650V	60mΩ	48A	15.3nC	162pF	175℃	TO-247-3
P3M06060T3	650V	60mΩ	46A	15.3nC	162pF	175℃	TO-220-3
P3M06040K4	650V	40mΩ	61A	18.3nC	246pF	175℃	TO-247-4
P3M06040K3	650V	40mΩ	61A	18.3nC	246pF	175℃	TO-247-3

        
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